How multilayer POI substrates boost SAW filter performances
Panel Discussion - Afternoon Track
3:45 PM - 4:30 PMWed
Sierra Ballroom
Registration Required

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Speakers
Jean-Marc Le Meil
Executive Vice-President for Mobile Communications Division
Soitec
Rich Ruby
IEEE Fellow, Director of FBAR and SiSAW Technology
Broadcom
Sylvain Ballandras
Manager of the SOITEC Besançon office
Soitec
Aziz Alami-Idrissi
Senior Director of RF Filter Business Unit
Soitec
With the telecommunication bands demanding growth, Piezo on Insulator (POI) technology enhances SAW filters performances. This panel intends to highlight the value of the POI technology and compare it with existing alternatives. Rich Ruby's abstract: In the early 90’s, the first piezoelectric filter based on acoustically generated surface waves (SAWs) were introduced into the mobile space. In 2001, the first Bulk wave acoustic devices (BAW) for the mobile space were introduced. The first and most dominant version of BAW are the FBAR (Free standing Bulk Acoustic Wave Resonator) filters. Significant innovation occurred for both surface and bulk wave technologies as they competed for slots in a mobile device. Soon after FBAR came out, SAW engineers introduced a Temperature-Compensated SAW. In 2016 FBAR introduced Aluminum/Scandium Nitride (ASN) piezoelectric films. ASN has much higher coupling than AlN. Almost like clockwork and in lock step, a new SAW technology Guided Wave SAWs (GWSAWs, a.k.a. POI a.k.a. Incredibly High Performance Filters or I.H.P.) were introduced. A perspective of the pros and cons of both technologies will be discussed